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IRF530SPBF123
  • Manufacturer No:
    IRF530SPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    205956
  • Description:
    MOSFET N-CH 100V 14A D2PAK
  • Quantity:
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  • Qty Unit Price price
  • 1 $1.604 $1.604
  • 10 $1.588 $15.88
  • 100 $1.572 $157.2
  • 1000 $1.556 $1556
  • 10000 $1.54 $15400

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IRF530SPBF
  • Manufacturer No:
    IRF530SPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF530SPBF
  • SKU:
    205956
  • Description:
    MOSFET N-CH 100V 14A D2PAK

IRF530SPBF Details

MOSFET N-CH 100V 14A D2PAK

IRF530SPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • Drain to Source Voltage (Vdss): 100V
  • Max Operating Temperature: 175°C
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Threshold Voltage: 4V
  • Vgs (Max): ±20V
  • Turn On Delay Time: 10 ns
  • Continuous Drain Current (ID): 14A
  • Width: 9.65mm
  • Drain to Source Resistance: 160mOhm
  • Fall Time (Typ): 24 ns
  • Nominal Vgs: 4 V
  • Current - Continuous Drain (Id) @ 25°C: 14A Tc
  • Rds On Max: 160 mΩ
  • Weight: 1.946308g
  • Power Dissipation-Max: 3.7W Ta 88W Tc
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Factory Lead Time: 8 Weeks
  • Number of Pins: 3
  • Published: 2014
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • FET Type: N-Channel
  • Height: 4.83mm
  • Operating Temperature: -55°C~175°C TJ
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Length: 10.67mm
  • Resistance: 160mOhm
  • Supplier Device Package: TO-263 (D2Pak)
  • Turn-Off Delay Time: 23 ns
  • Power Dissipation: 3.7W
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Rise Time: 34ns
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • Input Capacitance: 670pF

Excellent

Based on reviews

Excellent

Based on reviews

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