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- Manufacturer No：IRF630STRRPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：159767
- Description：MOSFET N-CH 200V 9A D2PAK
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- 10 $2345.997 $23459.97
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- 1000 $2299.771 $2299771
- 10000 $2277 $22770000
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- Manufacturer No：IRF630STRRPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF630STRRPBF
- SKU：159767
- Description：MOSFET N-CH 200V 9A D2PAK
User Guide
User Guide
IRF630STRRPBF Details
MOSFET N-CH 200V 9A D2PAK
IRF630STRRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 8 Weeks
- Published: 2016
- Drain to Source Breakdown Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 9A
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Width: 9.65mm
- Weight: 1.437803g
- Rise Time: 28ns
- Current - Continuous Drain (Id) @ 25°C: 9A Tc
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Power Dissipation-Max: 3W Ta 74W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Power Dissipation: 3W
- FET Type: N-Channel
- Height: 4.83mm
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ): 20 ns
- Length: 10.67mm
- Drain to Source Resistance: 400mOhm
- Turn-Off Delay Time: 39 ns
- Rds On Max: 400 mΩ
- Input Capacitance: 800pF
- Turn On Delay Time: 9.4 ns
- Supplier Device Package: D2PAK (TO-263)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
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