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- Manufacturer No：IRF9640LPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：208164
- Description：MOSFET P-CH 200V 11A TO-262
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- Manufacturer No：IRF9640LPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF9640LPBF
- SKU：208164
- Description：MOSFET P-CH 200V 11A TO-262
User Guide
User Guide
IRF9640LPBF Details
MOSFET P-CH 200V 11A TO-262
IRF9640LPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Termination: SMD/SMT
- Dual Supply Voltage: 200V
- Published: 2010
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Threshold Voltage: 4V
- Width: 4.7mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 13 ns
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Weight: 6.000006g
- Fall Time (Typ): 38 ns
- Rds On Max: 500 mΩ
- Height: 9.01mm
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Supplier Device Package: I2PAK
- Continuous Drain Current (ID): -11A
- Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Power Dissipation: 3W
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- FET Type: P-Channel
- Drain to Source Resistance: 500mOhm
- Input Capacitance: 1.2nF
- Length: 10.41mm
- Nominal Vgs: 4 V
- Turn-Off Delay Time: 39 ns
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Drain to Source Breakdown Voltage: -200V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Rise Time: 43ns
- Power Dissipation-Max: 3W Ta 125W Tc
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