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- Manufacturer No：IRFBC30ASPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：162947
- Description：MOSFET N-CH 600V 3.6A D2PAK
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- Manufacturer No：IRFBC30ASPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFBC30ASPBF
- SKU：162947
- Description：MOSFET N-CH 600V 3.6A D2PAK
User Guide
User Guide
IRFBC30ASPBF Details
MOSFET N-CH 600V 3.6A D2PAK
IRFBC30ASPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Contact Plating: Tin
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ): 12 ns
- Drain to Source Resistance: 2.2Ohm
- Continuous Drain Current (ID): 3.6A
- Turn-Off Delay Time: 19 ns
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Rise Time: 13ns
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Power Dissipation-Max: 74W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Height: 4.83mm
- Vgs (Max): ±30V
- Length: 10.67mm
- Width: 9.65mm
- Input Capacitance: 510pF
- Supplier Device Package: D2PAK
- Weight: 1.437803g
- Turn On Delay Time: 9.8 ns
- Power Dissipation: 74W
- Current - Continuous Drain (Id) @ 25°C: 3.6A Tc
- Rds On Max: 2.2 Ω
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