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- Manufacturer No：IRFBC40ASPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：163646
- Description：MOSFET N-CH 600V 6.2A D2PAK
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- Manufacturer No：IRFBC40ASPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFBC40ASPBF
- SKU：163646
- Description：MOSFET N-CH 600V 6.2A D2PAK
User Guide
User Guide
IRFBC40ASPBF Details
MOSFET N-CH 600V 6.2A D2PAK
IRFBC40ASPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Published: 2008
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max): ±30V
- Resistance: 1.2Ohm
- Width: 9.65mm
- Fall Time (Typ): 18 ns
- Power Dissipation: 125W
- Nominal Vgs: 4 V
- Turn-Off Delay Time: 31 ns
- Rise Time: 23ns
- Rds On Max: 1.2 Ω
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1036pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Height: 4.83mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Length: 10.67mm
- Drain to Source Resistance: 1.2Ohm
- Turn On Delay Time: 13 ns
- Continuous Drain Current (ID): 6.2A
- Supplier Device Package: D2PAK
- Weight: 1.437803g
- Power Dissipation-Max: 125W Tc
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 6.2A Tc
- Input Capacitance: 1.036nF
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