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- Manufacturer No：IRLZ14SPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：221201
- Description：MOSFET N-CH 60V 10A D2PAK
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- Manufacturer No：IRLZ14SPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLZ14SPBF
- SKU：221201
- Description：MOSFET N-CH 60V 10A D2PAK
User Guide
User Guide
IRLZ14SPBF Details
MOSFET N-CH 60V 10A D2PAK
IRLZ14SPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Drain to Source Breakdown Voltage: 60V
- Max Operating Temperature: 175°C
- Element Configuration: Single
- FET Type: N-Channel
- Height: 4.83mm
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Resistance: 200mOhm
- Length: 10.41mm
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Supplier Device Package: D2PAK
- Rise Time: 110ns
- Weight: 1.437803g
- Rds On Max: 200 mΩ
- Input Capacitance: 400pF
- Drive Voltage (Max Rds On,Min Rds On): 4V 5V
- Power Dissipation-Max: 3.7W Ta 43W Tc
- Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Drain to Source Voltage (Vdss): 60V
- Published: 2014
- Gate to Source Voltage (Vgs): 10V
- Continuous Drain Current (ID): 10A
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Resistance: 200mOhm
- Width: 9.65mm
- Turn-Off Delay Time: 17 ns
- Fall Time (Typ): 26 ns
- Vgs (Max): ±10V
- Recovery Time: 130 ns
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Power Dissipation: 3.7W
- Turn On Delay Time: 9.3 ns
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
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