SI1414DH-T1-GE3Vishay Siliconix
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    SI1414DH-T1-GE3123
    • Manufacturer No：
      SI1414DH-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      246079
    • Description：
      Single N-Channel 30 V 0.046 O 5.7 nC Power Mosfet - SOT-363 (SC-70-6)
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    SI1414DH-T1-GE3
    • Manufacturer No：
      SI1414DH-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI1414DH-T1-GE3
    • SKU：
      246079
    • Description：
      Single N-Channel 30 V 0.046 O 5.7 nC Power Mosfet - SOT-363 (SC-70-6)

    User Guide

    User Guide

    SI1414DH-T1-GE3 Details

    Single N-Channel 30 V 0.046 O 5.7 nC Power Mosfet - SOT-363 (SC-70-6)

    SI1414DH-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 30V
    • Drain Current-Max (Abs) (ID): 4A
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Gate to Source Voltage (Vgs): 8V
    • Fall Time (Typ): 10 ns
    • Turn-Off Delay Time: 20 ns
    • Turn On Delay Time: 6 ns
    • Vgs(th) (Max) @ Id: 1V @ 250μA
    • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
    • Resistance: 46mOhm
    • Weight: 28.009329mg
    • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Published: 2013
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Transistor Element Material: SILICON
    • Factory Lead Time: 15 Weeks
    • Operating Temperature: -55°C~150°C TJ
    • Continuous Drain Current (ID): 4A
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Rise Time: 10 ns
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Series: TrenchFET?
    • Vgs (Max): ±8V
    • Power Dissipation: 1.56W
    • Current - Continuous Drain (Id) @ 25°C: 4A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
    • Power Dissipation-Max: 2.8W Tc
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