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- Manufacturer No：SI2374DS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：265800
- Description：MOSFET N-CHAN 20V SOT23
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- 10 $0.053 $0.53
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- 1000 $0.051 $51
- 10000 $0.05 $500
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- Manufacturer No：SI2374DS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2374DS-T1-GE3
- SKU：265800
- Description：MOSFET N-CHAN 20V SOT23
User Guide
User Guide
SI2374DS-T1-GE3 Details
MOSFET N-CHAN 20V SOT23
SI2374DS-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Terminations: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Published: 2017
- Threshold Voltage: 1V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time: 10 ns
- Height: 1.12mm
- Rise Time: 22 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Power Dissipation: 960mW
- Power Dissipation-Max: 960mW Ta 1.7W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Continuous Drain Current (ID): 4.5A
- Fall Time (Typ): 9 ns
- Turn-Off Delay Time: 16 ns
- Series: TrenchFET?
- Vgs (Max): ±8V
- Drain Current-Max (Abs) (ID): 5.9A
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Rds On (Max) @ Id, Vgs: 30m Ω @ 4A, 4.5V
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