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- Manufacturer No：SI3481DV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：327051
- Description：MOSFET 30V 5.3A 2.0W 48mohm @ 10V
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- 10 $0.384 $3.84
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- Manufacturer No：SI3481DV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3481DV-T1-GE3
- SKU：327051
- Description：MOSFET 30V 5.3A 2.0W 48mohm @ 10V
User Guide
User Guide
SI3481DV-T1-GE3 Details
MOSFET 30V 5.3A 2.0W 48mohm @ 10V
SI3481DV-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Terminations: 6
- Terminal Form: GULL WING
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Drain Current-Max (Abs) (ID): 4A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Turn On Delay Time: 11 ns
- Drain to Source Breakdown Voltage: -30V
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Drain-source On Resistance-Max: 0.048Ohm
- Rds On (Max) @ Id, Vgs: 48m Ω @ 5.3A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Part Status: Obsolete
- Published: 2016
- Number of Pins: 6
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 4A
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Fall Time (Typ): 35 ns
- Turn-Off Delay Time: 60 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Rise Time: 14ns
- Current - Continuous Drain (Id) @ 25°C: 4A Ta
- Power Dissipation-Max: 1.14W Ta
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