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- Manufacturer No：SI4408DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：317682
- Description：MOSFET N-CH 20V 14A 8-SOIC
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- 1 $261.305 $261.305
- 10 $258.717 $2587.17
- 100 $256.155 $25615.5
- 1000 $253.618 $253618
- 10000 $251.106 $2511060
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- Manufacturer No：SI4408DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4408DY-T1-GE3
- SKU：317682
- Description：MOSFET N-CH 20V 14A 8-SOIC
User Guide
User Guide
SI4408DY-T1-GE3 Details
MOSFET N-CH 20V 14A 8-SOIC
SI4408DY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Length: 5mm
- Drain to Source Breakdown Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 60 ns
- Continuous Drain Current (ID): 21A
- Turn On Delay Time: 42 ns
- Weight: 506.605978mg
- Power Dissipation-Max: 1.6W Ta
- Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
- Rds On (Max) @ Id, Vgs: 4.5m Ω @ 21A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Published: 2015
- Time@Peak Reflow Temperature-Max (s): 30
- REACH SVHC: Unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Width: 4mm
- Threshold Voltage: 1V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Height: 1.55mm
- Series: TrenchFET?
- Fall Time (Typ): 26 ns
- Rise Time: 42 ns
- Resistance: 4.5mOhm
- Current - Continuous Drain (Id) @ 25°C: 14A Ta
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
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