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- Manufacturer No：SI4554DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：
Get the PDF file - SKU：287956
- Description：VISHAY SI4554DY-T1-GE3 Dual MOSFET, N and P Channel, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
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- Manufacturer No：SI4554DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4554DY-T1-GE3
- SKU：287956
- Description：VISHAY SI4554DY-T1-GE3 Dual MOSFET, N and P Channel, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
User Guide
User Guide
SI4554DY-T1-GE3 Details
VISHAY SI4554DY-T1-GE3 Dual MOSFET, N and P Channel, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
SI4554DY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Published: 2013
- Max Operating Temperature: 150°C
- Factory Lead Time: 14 Weeks
- Power Dissipation: 2W
- Width: 4mm
- Drain to Source Breakdown Voltage: 40V
- Threshold Voltage: 1V
- Continuous Drain Current (ID): 8A
- Height: 1.75mm
- FET Feature: Logic Level Gate
- Series: TrenchFET?
- Rise Time: 40ns
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Max Power Dissipation: 3.2W
- Weight: 506.605978mg
- Rds On Max: 24 mΩ
- Power - Max: 3.1W 3.2W
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Contact Plating: Tin
- Number of Pins: 8
- REACH SVHC: No SVHC
- Max Junction Temperature (Tj): 150°C
- Length: 5mm
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 40V
- Operating Temperature: -55°C~150°C TJ
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C: 8A
- Turn-Off Delay Time: 40 ns
- Fall Time (Typ): 18 ns
- Supplier Device Package: 8-SO
- Turn On Delay Time: 42 ns
- Drain to Source Resistance: 21mOhm
- FET Type: N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance: 690pF
- Rds On (Max) @ Id, Vgs: 24mOhm @ 6.8A, 10V
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