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- Manufacturer No：SIHP33N60E-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：332253
- Description：MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
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- 100 $8392.364 $839236.4
- 1000 $8309.271 $8309271
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- Manufacturer No：SIHP33N60E-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIHP33N60E-GE3
- SKU：332253
- Description：MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
User Guide
User Guide
SIHP33N60E-GE3 Details
MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
SIHP33N60E-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Pins: 3
- Factory Lead Time: 14 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JEDEC-95 Code: TO-220AB
- Vgs (Max): ±30V
- Fall Time (Typ): 80 ns
- Rise Time: 90ns
- Subcategory: FET General Purpose Powers
- Pulsed Drain Current-Max (IDM): 88A
- Current - Continuous Drain (Id) @ 25°C: 33A Tc
- Drain-source On Resistance-Max: 0.099Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
- RoHS Status: ROHS3 Compliant
- Packaging: Bulk
- Mount: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Number of Terminations: 3
- Published: 2011
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- Threshold Voltage: 2V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-220-3
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn-Off Delay Time: 150 ns
- Continuous Drain Current (ID): 33A
- Weight: 6.000006g
- Turn On Delay Time: 56 ns
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Power Dissipation-Max: 278W Tc
- Power Dissipation: 278W
- Rds On (Max) @ Id, Vgs: 99m Ω @ 16.5A, 10V
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