SIHP6N40D-GE3Vishay Siliconix
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    SIHP6N40D-GE3123
    • Manufacturer No：
      SIHP6N40D-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      334899
    • Description：
      VISHAY SIHP6N40D-GE3 MOSFET Transistor, N Channel, 6 A, 400 V, 0.85 ohm, 10 V, 3 V
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    Inventory:990
    • Qty Unit Price price
    • 1 $182.109 $182.109
    • 10 $180.305 $1803.05
    • 100 $178.519 $17851.9
    • 1000 $176.751 $176751
    • 10000 $175 $1750000

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    SIHP6N40D-GE3
    • Manufacturer No：
      SIHP6N40D-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SIHP6N40D-GE3
    • SKU：
      334899
    • Description：
      VISHAY SIHP6N40D-GE3 MOSFET Transistor, N Channel, 6 A, 400 V, 0.85 ohm, 10 V, 3 V

    User Guide

    User Guide

    SIHP6N40D-GE3 Details

    VISHAY SIHP6N40D-GE3 MOSFET Transistor, N Channel, 6 A, 400 V, 0.85 ohm, 10 V, 3 V

    SIHP6N40D-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Factory Lead Time: 8 Weeks
    • Number of Terminations: 3
    • Published: 2011
    • REACH SVHC: Unknown
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • DS Breakdown Voltage-Min: 400V
    • Drain Current-Max (Abs) (ID): 6A
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Package / Case: TO-220-3
    • Drain-source On Resistance-Max: 1Ohm
    • Vgs (Max): ±30V
    • Fall Time (Typ): 8 ns
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Width: 4.65mm
    • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
    • Height: 9.01mm
    • Power Dissipation: 104W
    • Rds On (Max) @ Id, Vgs: 1 Ω @ 3A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Packaging: Tube
    • Number of Pins: 3
    • Threshold Voltage: 3V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Voltage (Vdss): 400V
    • Operating Temperature: -55°C~150°C TJ
    • Continuous Drain Current (ID): 6A
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • JEDEC-95 Code: TO-220AB
    • Turn On Delay Time: 12 ns
    • Turn-Off Delay Time: 14 ns
    • Weight: 6.000006g
    • Rise Time: 11ns
    • Current - Continuous Drain (Id) @ 25°C: 6A Tc
    • Power Dissipation-Max: 104W Tc
    • Length: 10.51mm
    • Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 100V
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