GD25Q80CTIGGigaDevice Semiconductor (HK) Limited
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    • Manufacturer No：
      GD25Q80CTIG
    • Manufacturer：
      GigaDevice Semiconductor (HK) Limited
    • Category：
      Memory
    • Datasheet：
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    • SKU：
      10165260
    • Description：
      R-PDSO-G8 Surface Mount Tube 8MX1 ic memory 120MHz 50mus 2.4ms 3.9mm 8388608bit
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    • Manufacturer No：
      GD25Q80CTIG
    • Manufacturer：
      GigaDevice Semiconductor (HK) Limited
    • Category：
      Memory
    • Datasheet：
      GD25Q80CTIG
    • SKU：
      10165260
    • Description：
      R-PDSO-G8 Surface Mount Tube 8MX1 ic memory 120MHz 50mus 2.4ms 3.9mm 8388608bit

    User Guide

    User Guide

    GD25Q80CTIG Details

    R-PDSO-G8 Surface Mount Tube 8MX1 ic memory 120MHz 50mus 2.4ms 3.9mm 8388608bit

    GD25Q80CTIG Specification Parameters

    • Part Status: Active
    • Mounting Type: Surface Mount
    • Memory Width: 1
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Terminations: 8
    • Packaging: Tube
    • Programming Voltage: 3.3V
    • Factory Lead Time: 4 Weeks
    • Terminal Pitch: 1.27mm
    • Memory Format: FLASH
    • Supply Voltage-Min (Vsup): 2.7V
    • Width: 3.9mm
    • Length: 4.9mm
    • JESD-30 Code: R-PDSO-G8
    • Parallel/Serial: SERIAL
    • Technology: FLASH - NOR
    • Memory Interface: SPI - Quad I/O
    • Memory Size: 8Mb 1M x 8
    • Organization: 8MX1
    • RoHS Status: ROHS3 Compliant
    • Number of Functions: 1
    • Surface Mount: YES
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Terminal Position: DUAL
    • Supply Voltage: 3.3V
    • Published: 2016
    • Moisture Sensitivity Level (MSL): 3 (168 Hours)
    • Operating Temperature: -40°C~85°C TA
    • Supply Voltage-Max (Vsup): 3.6V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Height Seated (Max): 1.75mm
    • Memory Type: Non-Volatile
    • Voltage - Supply: 2.7V~3.6V
    • Operating Mode: SYNCHRONOUS
    • Clock Frequency: 120MHz
    • Memory Density: 8388608 bit
    • Write Cycle Time - Word, Page: 50μs, 2.4ms
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