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- Manufacturer No：TP0610K-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：TP0610K-T1-GE3
- SKU：1028115
- Description：VISHAY - TP0610K-T1-GE3 - MOSFET-Transistor, p-Kanal, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
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User Guide
TP0610K-T1-GE3 Details
VISHAY - TP0610K-T1-GE3 - MOSFET-Transistor, p-Kanal, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
TP0610K-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Published: 2016
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Width: 1.4mm
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 35 ns
- Height: 1.02mm
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Drain to Source Breakdown Voltage: -60V
- Threshold Voltage: -2V
- Supplier Device Package: SOT-23-3 (TO-236)
- Rds On Max: 190 mΩ
- Input Capacitance: 155pF
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
- Current - Continuous Drain (Id) @ 25°C: 185mA Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 60V
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Drain to Source Resistance: 10Ohm
- Turn On Delay Time: 20 ns
- FET Type: P-Channel
- Power Dissipation: 350mW
- Series: TrenchFET?
- Length: 3.04mm
- Weight: 1.437803g
- Power Dissipation-Max: 350mW Ta
- Nominal Vgs: -1 V
- Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
- Continuous Drain Current (ID): -185mA
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