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  • Manufacturer No:
    QS6K1TR
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    10639587
  • Description:
    MOSFET 2N-CH 30V 1A TSMT6
  • Quantity:
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Inventory:10930
  • Qty Unit Price price
  • 1 $0.688 $0.688
  • 10 $0.681 $6.81
  • 100 $0.674 $67.4
  • 1000 $0.667 $667
  • 10000 $0.66 $6600

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  • Manufacturer No:
    QS6K1TR
  • Manufacturer:
    ROHM
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    QS6K1TR
  • SKU:
    10639587
  • Description:
    MOSFET 2N-CH 30V 1A TSMT6

QS6K1TR Details

MOSFET 2N-CH 30V 1A TSMT6

QS6K1TR Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Number of Pins: 6
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 10
  • Element Configuration: Dual
  • Current Rating: 1A
  • Continuous Drain Current (ID): 1A
  • Factory Lead Time: 20 Weeks
  • Drain to Source Breakdown Voltage: 30V
  • JESD-609 Code: e1
  • Threshold Voltage: 1.5V
  • Operating Temperature: 150°C TJ
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation: 1.25W
  • Fall Time (Typ): 7 ns
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • FET Feature: Logic Level Gate
  • Nominal Vgs: 1.5 V
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Resistance: 364mOhm
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Terminations: 6
  • Pin Count: 6
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Gate to Source Voltage (Vgs): 12V
  • Published: 2006
  • Drain Current-Max (Abs) (ID): 1A
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 30V
  • Dual Supply Voltage: 30V
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Turn-Off Delay Time: 15 ns
  • Turn On Delay Time: 7 ns
  • Rise Time: 7 ns
  • Max Power Dissipation: 900mW
  • FET Type: 2 N-Channel (Dual)
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Base Part Number: *K1
  • Rds On (Max) @ Id, Vgs: 238m Ω @ 1A, 4.5V

ROHM — Manufacturer Introduction

ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products. ROHM's presence in the North American market continues to expand with a logistic headquarters in San Diego, California, a design center in San Jose, California, a QA Center in Novi, Michigan, a sales office in Guadalajara, Mexico and a sales network that covers marketing, sales, and engineering support for the North and South American clients from Canada to Brazil. In addition to a direct sales force, ROHM enjoys the collaboration of several sales-representative organizations and industry leading electronics distributors. For more than forty years, ROHM has stayed focused on the fundamental philosophy of customization. The company has worked closely with equipment manufacturers to develop next generation equipment and use the technology acquired through these efforts to propose system solutions to its customers and continually provide them with high added values. The majority of ROHM's manufacturing equipment has been developed in-house. This has given ROHM the ability to respond immediately to changing market needs. The extent of ROHM products is a result of innovations and the capability to adjust to market demands. Automotive, telecommunication, computer, and consumer OEMs are among the leading end users of ROHM products.

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