IPB020N04N GInfineon
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    • Manufacturer No：
      IPB020N04N G
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPB020N04N G
    • SKU：
      10931486
    • Description：

    User Guide

    User Guide

    IPB020N04N G Details

    IPB020N04N G Specification Parameters

    • Number of Elements: 1
    • RoHS Status: RoHS Compliant
    • Surface Mount: YES
    • Pin Count: 4
    • Number of Terminals: 6
    • Peak Reflow Temperature (Cel): 260
    • Operating Temperature (Max): 175°C
    • Reach Compliance Code: compliant
    • DS Breakdown Voltage-Min: 40V
    • Transistor Application: SWITCHING
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Drain Current-Max (Abs) (ID): 140A
    • Additional Feature: ULTRA-LOW RESISTANCE
    • Power Dissipation-Max (Abs): 167W
    • Avalanche Energy Rating (Eas): 140 mJ
    • Moisture Sensitivity Level (MSL): 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Qualification Status: Not Qualified
    • Terminal Form: GULL WING
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Terminal Position: SINGLE
    • Terminal Finish: MATTE TIN
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Polarity/Channel Type: N-CHANNEL
    • Pbfree Code: icon-pbfree yes
    • JEDEC-95 Code: TO-263
    • JESD-30 Code: R-PSSO-G6
    • Drain-source On Resistance-Max: 0.002Ohm
    • Pulsed Drain Current-Max (IDM): 980A
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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