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  • Manufacturer No:
    IRLML6401TR
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRLML6401TR
  • SKU:
    10937829
  • Description:
    MOSFET P-CH 12V 4.3A SOT-23

IRLML6401TR Details

MOSFET P-CH 12V 4.3A SOT-23

IRLML6401TR Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • RoHS Status: Non-RoHS Compliant
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Voltage (Vdss): 12V
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Packaging: Cut Tape (CT)
  • Transistor Application: SWITCHING
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Subcategory: Other Transistors
  • JESD-30 Code: R-PDSO-G3
  • Series: HEXFET?
  • Drain Current-Max (Abs) (ID): 4.3A
  • JEDEC-95 Code: TO-236AB
  • Vgs(th) (Max) @ Id: 950mV @ 250μA
  • Current - Continuous Drain (Id) @ 25°C: 4.3A Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • DS Breakdown Voltage-Min: 12V
  • Operating Temperature (Max): 150°C
  • Published: 2003
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Additional Feature: HIGH RELIABILITY
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • FET Type: P-Channel
  • Power Dissipation-Max (Abs): 1.3W
  • Pulsed Drain Current-Max (IDM): 34A
  • Drain-source On Resistance-Max: 0.05Ohm
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Avalanche Energy Rating (Eas): 33 mJ
  • Rds On (Max) @ Id, Vgs: 50m Ω @ 4.3A, 4.5V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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