IPD30N03S4L-09Infineon
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    • Manufacturer No：
      IPD30N03S4L-09
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IPD30N03S4L-09
    • SKU：
      10961662
    • Description：

    User Guide

    User Guide

    IPD30N03S4L-09 Details

    IPD30N03S4L-09 Specification Parameters

    • Number of Terminals: 2
    • Moisture Sensitivity Level (MSL): 1
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Transistor Element Material: SILICON
    • Terminal Position: SINGLE
    • Drain Current-Max (Abs) (ID): 30A
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Polarity/Channel Type: N-CHANNEL
    • Pbfree Code: icon-pbfree yes
    • JEDEC-95 Code: TO-252
    • Drain-source On Resistance-Max: 0.009Ohm
    • Number of Elements: 1
    • RoHS Status: RoHS Compliant
    • Surface Mount: YES
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Qualification Status: Not Qualified
    • Operating Temperature (Max): 175°C
    • Reach Compliance Code: compliant
    • DS Breakdown Voltage-Min: 30V
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Pulsed Drain Current-Max (IDM): 120A
    • Power Dissipation-Max (Abs): 42W
    • Avalanche Energy Rating (Eas): 28 mJ
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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