IRGB20B60PD1INTERNATIONAL RECTIFIER CORP
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    • Manufacturer No：
      IRGB20B60PD1
    • Manufacturer：
      INTERNATIONAL RECTIFIER CORP
    • Category：
    • Datasheet：
    • SKU：
      11051367
    • Description：
    • Quantity：
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    • Manufacturer No：
      IRGB20B60PD1
    • Manufacturer：
      INTERNATIONAL RECTIFIER CORP
    • Category：
    • Datasheet：
      IRGB20B60PD1
    • SKU：
      11051367
    • Description：

    User Guide

    User Guide

    IRGB20B60PD1 Details

    IRGB20B60PD1 Specification Parameters

    • Surface Mount: NO
    • RoHS Status: Non-RoHS Compliant
    • Pin Count: 3
    • Pbfree Code: no
    • JESD-609 Code: e0
    • Operating Temperature (Max): 150°C
    • Transistor Element Material: SILICON
    • Reach Compliance Code: compliant
    • Gate-Emitter Voltage-Max: 20V
    • Terminal Form: THROUGH-HOLE
    • Peak Reflow Temperature (Cel): 225
    • JEDEC-95 Code: TO-220AB
    • Turn On Time: 25 ns
    • Rise Time-Max: 8ns
    • Transistor Application: POWER CONTROL
    • Fall Time-Max (tf): 17ns
    • Turn Off Time-Nom (toff): 121 ns
    • Number of Elements: 1
    • Gate-Emitter Thr Voltage-Max: 5V
    • Number of Terminals: 3
    • Qualification Status: Not Qualified
    • Time@Peak Reflow Temperature-Max (s): 30
    • Terminal Finish: Tin/Lead (Sn/Pb)
    • Collector-Emitter Voltage-Max: 600V
    • Terminal Position: SINGLE
    • Additional Feature: HIGH RELIABILITY
    • Collector Current-Max (IC): 40A
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Polarity/Channel Type: N-CHANNEL
    • JESD-30 Code: R-PSFM-T3
    • Case Connection: COLLECTOR
    • Subcategory: Insulated Gate BIP Transistors
    • Power Dissipation-Max (Abs): 215W
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