IXFN120N20 IXYS
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    • Manufacturer No：
      IXFN120N20
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      11076582
    • Description：
      MOSFET N-CH 200V 120A SOT-227B
    • Quantity：
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    • Qty Unit Price price
    • 1 $29.94 $29.94
    • 10 $29.643 $296.43
    • 100 $29.349 $2934.9
    • 1000 $29.058 $29058
    • 10000 $28.7699 $287699

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    • Manufacturer No：
      IXFN120N20
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFN120N20
    • SKU：
      11076582
    • Description：
      MOSFET N-CH 200V 120A SOT-227B

    User Guide

    User Guide

    IXFN120N20 Details

    MOSFET N-CH 200V 120A SOT-227B

    IXFN120N20 Specification Parameters

    • Number of Elements: 1
    • ECCN Code: EAR99
    • Moisture Sensitivity Level (MSL): Not Applicable
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Pin Count: 4
    • Packaging: Tube
    • Qualification Status: Not Qualified
    • Mounting Type: Chassis Mount
    • Voltage - Rated DC: 200V
    • Dual Supply Voltage: 200V
    • Transistor Element Material: SILICON
    • Published: 2003
    • Case Connection: ISOLATED
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Terminal Form: UNSPECIFIED
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Terminal Finish: Nickel (Ni)
    • Continuous Drain Current (ID): 120A
    • Additional Feature: AVALANCHE RATED
    • Rise Time: 55 ns
    • Package / Case: SOT-227-4, miniBLOC
    • Resistance: 17mOhm
    • Series: HiPerFET?
    • JESD-30 Code: R-PUFM-X4
    • Power Dissipation-Max: 600W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
    • RoHS Status: RoHS Compliant
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Number of Terminations: 4
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Mount: Chassis Mount
    • Drain to Source Breakdown Voltage: 200V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Power Dissipation: 600W
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Terminal Position: UPPER
    • Fall Time (Typ): 40 ns
    • Current Rating: 120A
    • Recovery Time: 250 ns
    • Turn-Off Delay Time: 110 ns
    • Nominal Vgs: 4 V
    • Current - Continuous Drain (Id) @ 25°C: 120A Tc
    • Pulsed Drain Current-Max (IDM): 480A
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
    • Rds On (Max) @ Id, Vgs: 17m Ω @ 500mA, 10V
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