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- Manufacturer No：NAND08GW3B2CN6
- Manufacturer：MICRON TECHNOLOGY INC
- Category：
- Datasheet：NAND08GW3B2CN6
- SKU：11301494
- Description：
User Guide
User Guide
NAND08GW3B2CN6 Details
NAND08GW3B2CN6 Specification Parameters
- Number of Functions: 1
- Memory Width: 8
- Operating Temperature (Min): -40°C
- Technology: CMOS
- Supply Voltage: 3V
- Terminal Pitch: 0.5mm
- Temperature Grade: INDUSTRIAL
- Number of Terminals: 48
- Supply Voltage-Min (Vsup): 2.7V
- Width: 12mm
- Operating Mode: ASYNCHRONOUS
- Length: 18.4mm
- JESD-30 Code: R-PDSO-G48
- Organization: 1GX8
- Surface Mount: YES
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Operating Temperature (Max): 85°C
- Programming Voltage: 3V
- Memory IC Type: FLASH
- Pin Count: 48
- Supply Voltage-Max (Vsup): 3.6V
- Seated Height-Max: 1.2mm
- Parallel/Serial: PARALLEL
- HTS Code: 8542.32.00.51
- ECCN Code: 3A991.B.1.A
- Memory Density: 8589934592 bit
- Type: NAND TYPE
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