HYB18TC1G160C2F-3SQIMONDA AG
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    HYB18TC1G160C2F-3S123
    • Manufacturer No：
      HYB18TC1G160C2F-3S
    • Manufacturer：
      QIMONDA AG
    • Category：
    • Datasheet：
    • SKU：
      11377129
    • Description：
    • Quantity：
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    HYB18TC1G160C2F-3S
    • Manufacturer No：
      HYB18TC1G160C2F-3S
    • Manufacturer：
      QIMONDA AG
    • Category：
    • Datasheet：
      HYB18TC1G160C2F-3S
    • SKU：
      11377129
    • Description：

    User Guide

    User Guide

    HYB18TC1G160C2F-3S Details

    HYB18TC1G160C2F-3S Specification Parameters

    • Number of Functions: 1
    • RoHS Status: RoHS Compliant
    • Surface Mount: YES
    • Memory Width: 16
    • Supply Voltage: 1.8V
    • Interleaved Burst Length: 48
    • Terminal Position: BOTTOM
    • Seated Height-Max: 1.2mm
    • Output Characteristics: 3-STATE
    • Length: 12.5mm
    • Pin Count: 84
    • Operating Mode: SYNCHRONOUS
    • Supply Voltage-Max (Vsup): 1.9V
    • Additional Feature: AUTO/SELF REFRESH
    • Memory Density: 1073741824 bit
    • Access Time (Max): 0.45 ns
    • HTS Code: 8542.32.00.32
    • JESD-30 Code: R-PBGA-B84
    • Standby Current-Max: 0.019A
    • Number of Ports: 1
    • ECCN Code: EAR99
    • Qualification Status: Not Qualified
    • Technology: CMOS
    • Power Supplies: 1.8V
    • Sequential Burst Length: 48
    • Terminal Pitch: 0.8mm
    • Terminal Form: BALL
    • Width: 8mm
    • Supply Voltage-Min (Vsup): 1.7V
    • Number of Terminals: 84
    • I/O Type: COMMON
    • Refresh Cycles: 8192
    • Clock Frequency: 333MHz
    • Subcategory: DRAMs
    • Organization: 64MX16
    • Access Mode: MULTI BANK PAGE BURST
    • Memory IC Type: DDR DRAM
    • Supply Current-Max: 0.194mA
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