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- Manufacturer No：IRF640B
- Manufacturer：ROCHESTER ELECTRONICS LLC
- Category：
- Datasheet：IRF640B
- SKU：11429994
- Description：
User Guide
User Guide
IRF640B Details
IRF640B Specification Parameters
- Surface Mount: NO
- RoHS Status: Non-RoHS Compliant
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pin Count: 3
- Qualification Status: COMMERCIAL
- JESD-609 Code: e0
- Transistor Element Material: SILICON
- Terminal Finish: TIN LEAD
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type: N-CHANNEL
- JESD-30 Code: R-PSFM-T3
- Pulsed Drain Current-Max (IDM): 72A
- Avalanche Energy Rating (Eas): 250 mJ
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Moisture Sensitivity Level (MSL): NOT SPECIFIED
- Number of Terminals: 3
- Pbfree Code: no
- DS Breakdown Voltage-Min: 200V
- Terminal Position: SINGLE
- Transistor Application: SWITCHING
- Terminal Form: THROUGH-HOLE
- JEDEC-95 Code: TO-220AB
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID): 18A
- Drain-source On Resistance-Max: 0.18Ohm
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