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- Manufacturer No：UPD4811650GF-A10-9BT
- Manufacturer：RENESAS ELECTRONICS CORP
- Category：
- Datasheet：UPD4811650GF-A10-9BT
- SKU：11600011
- Description：
User Guide
User Guide
UPD4811650GF-A10-9BT Details
UPD4811650GF-A10-9BT Specification Parameters
- RoHS Status: Non-RoHS Compliant
- Supply Voltage: 3.3V
- Temperature Grade: COMMERCIAL
- JESD-609 Code: e0
- Technology: CMOS
- Terminal Finish: Tin/Lead (Sn/Pb)
- Terminal Position: QUAD
- Clock Frequency: 100MHz
- Terminal Pitch: 0.635mm
- Access Time (Max): 10 ns
- Supply Current-Max: 0.25mA
- Interleaved Burst Length: 1248
- Sequential Burst Length: 1248FP
- Subcategory: DRAMs
- Memory IC Type: SYNCHRONOUS DRAM
- Surface Mount: YES
- Power Supplies: 3.3V
- Qualification Status: Not Qualified
- Terminal Form: GULL WING
- Operating Temperature (Max): 70°C
- Memory Width: 32
- Number of Terminals: 100
- Output Characteristics: 3-STATE
- I/O Type: COMMON
- Refresh Cycles: 2048
- JESD-30 Code: R-PQFP-G100
- Memory Density: 16777216 bit
- Standby Current-Max: 0.003A
- Organization: 512KX32
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