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- Manufacturer No：2SK3067
- Manufacturer：TOSHIBA CORP
- Category：
- Datasheet：2SK3067
- SKU：12602368
- Description：
User Guide
User Guide
2SK3067 Details
2SK3067 Specification Parameters
- Surface Mount: NO
- RoHS Status: Non-RoHS Compliant
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminals: 3
- Operating Temperature (Max): 150°C
- DS Breakdown Voltage-Min: 600V
- Drain Current-Max (Abs) (ID): 2A
- Pulsed Drain Current-Max (IDM): 8A
- Transistor Application: SWITCHING
- Terminal Form: THROUGH-HOLE
- Subcategory: FET General Purpose Power
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code: R-PSFM-T3
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pin Count: 3
- Qualification Status: Not Qualified
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- Case Connection: ISOLATED
- Power Dissipation-Max (Abs): 25W
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type: N-CHANNEL
- Drain-source On Resistance-Max: 5Ohm
- Avalanche Energy Rating (Eas): 93 mJ
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