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- Manufacturer No：LL4448-GS08
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：LL4448-GS08
- SKU：12781125
- Description：VISHAY SEMICONDUCTOR LL4448-GS08 Small Signal Diode, Single, 100 V, 150 mA, 1 V, 8 ns, 2 A
User Guide
User Guide
LL4448-GS08 Details
VISHAY SEMICONDUCTOR LL4448-GS08 Small Signal Diode, Single, 100 V, 150 mA, 1 V, 8 ns, 2 A
LL4448-GS08 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- JESD-609 Code: e0
- Max Repetitive Reverse Voltage (Vrrm): 100V
- Operating Temperature - Junction: -65°C~175°C
- Max Operating Temperature: 175°C
- Published: 2009
- Power Dissipation: 500mW
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Max Reverse Voltage (DC): 75V
- Reverse Voltage: 75V
- Max Surge Current: 2A
- Current: 500mA
- Case Connection: ISOLATED
- Average Rectified Current: 150mA
- Max Reverse Leakage Current: 5μA
- Terminal Position: END
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time: 8 ns
- Capacitance: 4pF
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Length: 3.683mm
- Current - Reverse Leakage @ Vr: 5μA @ 75V
- Base Part Number: LL4448
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Termination: SMD/SMT
- Min Operating Temperature: -65°C
- Height: 1.6mm
- Max Junction Temperature (Tj): 175°C
- Max Power Dissipation: 500mW
- REACH SVHC: Unknown
- Diode Element Material: SILICON
- Diode Type: Standard
- Voltage: 75V
- Peak Non-Repetitive Surge Current: 2A
- Max Forward Surge Current (Ifsm): 2A
- Forward Voltage: 1V
- Terminal Finish: TIN LEAD
- Forward Current: 300mA
- Peak Reverse Current: 5μA
- Terminal Form: WRAP AROUND
- Contact Plating: Silver, Tin
- Recovery Time: 8 ns
- HTS Code: 8541.10.00.70
- Diameter: 1.6 mm
- Capacitance @ Vr, F: 4pF @ 0V 1MHz
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA
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