BAW56-E3-08
Vishay Semiconductor Diodes Division
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Number of Elements
2Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)ECCN Code
EAR99Pbfree Code
yesJESD-609 Code
e3Lead Free
Lead FreeContact Plating
TinMin Operating Temperature
-55°CTerminal Position
DUALNumber of Terminations
3Number of Pins
3Pin Count
3Terminal Form
GULL WINGPeak Reflow Temperature (Cel)
260Time@Peak Reflow Temperature-Max (s)
10Max Operating Temperature
150°CPublished
2009Diode Element Material
SILICONFactory Lead Time
15 WeeksDiode Type
StandardPeak Non-Repetitive Surge Current
2AMax Surge Current
2ASpeed
Fast Recovery =< 500ns, > 200mA (Io)Package / Case
TO-236-3, SC-59, SOT-23-3Average Rectified Current
250mAForward Current
250mALength
3.1mmMax Repetitive Reverse Voltage (Vrrm)
70VMax Reverse Voltage (DC)
70VForward Voltage
1.25VElement Configuration
Common AnodeHeight
1.05mmMax Power Dissipation
350mWOutput Current-Max
0.25AHTS Code
8541.10.00.70Reverse Recovery Time
6 nsRecovery Time
6 nsOperating Temperature - Junction
150°C MaxMax Reverse Leakage Current
2.5μADiode Configuration
1 Pair Common AnodeWeight
8.788352mgVoltage - Forward (Vf) (Max) @ If
1.25V @ 150mACurrent - Average Rectified (Io)
250mA DCWidth
1.43mmCurrent - Reverse Leakage @ Vr
2.5μA @ 70VBase Part Number
BAW56