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- Manufacturer No：BYV26E-TAP
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：BYV26E-TAP
- SKU：13053809
- Description：VISHAY BYV26E-TAPFast / Ultrafast Diode, Single, 1 kV, 1 A, 2.5 V, 75 ns, 30 A
User Guide
User Guide
BYV26E-TAP Details
VISHAY BYV26E-TAPFast / Ultrafast Diode, Single, 1 kV, 1 A, 2.5 V, 75 ns, 30 A
BYV26E-TAP Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Forward Voltage: 2.5V
- Max Junction Temperature (Tj): 175°C
- Current Rating: 1A
- Average Rectified Current: 1A
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature - Junction: -55°C~175°C
- Case Connection: ISOLATED
- Max Repetitive Reverse Voltage (Vrrm): 1kV
- Peak Non-Repetitive Surge Current: 30A
- HTS Code: 8541.10.00.80
- JESD-609 Code: e2
- Subcategory: Rectifier Diodes
- Width: 3.6mm
- Contact Plating: Silver, Tin
- Recovery Time: 75 ns
- Current - Reverse Leakage @ Vr: 5μA @ 1000V
- Package / Case: SOD-57, Axial
- Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Terminal Form: WIRE
- Max Operating Temperature: 175°C
- Published: 2006
- Output Current-Max: 1A
- Forward Current: 1A
- Diode Element Material: SILICON
- Packaging: Tape & Box (TB)
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Max Reverse Voltage (DC): 1kV
- Max Surge Current: 30A
- Max Forward Surge Current (Ifsm): 30A
- Peak Reverse Current: 5μA
- Voltage - DC Reverse (Vr) (Max): 1000V
- Height: 3.6mm
- Length: 4.2mm
- Reverse Recovery Time: 75 ns
- Diode Type: Avalanche
- Reverse Voltage: 1.1kV
- Terminal Finish: Tin/Silver (Sn96.5Ag3.5)
- Base Part Number: BYV26E
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