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1N5402-E3/73123
  • Manufacturer No:
    1N5402-E3/73
  • Manufacturer:
    Vishay Semiconductor Diodes Division
  • Category:
    Diodes - Rectifiers - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    13105789
  • Description:
    Diode 200V 3A 2-Pin DO-201AD Ammo
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1N5402-E3/73
  • Manufacturer No:
    1N5402-E3/73
  • Manufacturer:
    Vishay Semiconductor Diodes Division
  • Category:
    Diodes - Rectifiers - Single
  • Datasheet:
    1N5402-E3/73
  • SKU:
    13105789
  • Description:
    Diode 200V 3A 2-Pin DO-201AD Ammo

1N5402-E3/73 Details

Diode 200V 3A 2-Pin DO-201AD Ammo

1N5402-E3/73 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Pins: 2
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Application: GENERAL PURPOSE
  • Average Rectified Current: 3A
  • Published: 2012
  • Max Repetitive Reverse Voltage (Vrrm): 200V
  • Terminal Form: WIRE
  • Max Operating Temperature: 150°C
  • Factory Lead Time: 18 Weeks
  • Diode Type: Standard
  • Forward Voltage: 1.2V
  • HTS Code: 8541.10.00.80
  • Subcategory: Rectifier Diodes
  • Max Surge Current: 200A
  • Min Operating Temperature: -50°C
  • Package / Case: DO-201AD, Axial
  • Additional Feature: FREE WHEELING DIODE, LOW LEAKAGE CURRENT
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Pin Count: 2
  • Mount: Through Hole
  • Number of Phases: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Output Current-Max: 3A
  • Forward Current: 3A
  • Max Reverse Voltage (DC): 200V
  • Reverse Voltage: 200V
  • Terminal Finish: Matte Tin (Sn)
  • Diode Element Material: SILICON
  • Element Configuration: Single
  • Packaging: Tape & Box (TB)
  • Case Connection: ISOLATED
  • Peak Reverse Current: 5μA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Peak Non-Repetitive Surge Current: 200A
  • Operating Temperature - Junction: -50°C~150°C
  • Current - Reverse Leakage @ Vr: 5μA @ 200V
  • Capacitance @ Vr, F: 30pF @ 4V 1MHz
  • Base Part Number: 1N5402

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Excellent

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