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- Manufacturer No：BAS386-TR
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：BAS386-TR
- SKU：13108172
- Description：Diode Small Signal Schottky 50V 0.2A 2-Pin MicroMELF T/R
User Guide
User Guide
BAS386-TR Details
Diode Small Signal Schottky 50V 0.2A 2-Pin MicroMELF T/R
BAS386-TR Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Max Junction Temperature (Tj): 125°C
- Max Repetitive Reverse Voltage (Vrrm): 50V
- Min Operating Temperature: -65°C
- Factory Lead Time: 13 Weeks
- Max Surge Current: 5A
- Max Forward Surge Current (Ifsm): 5A
- Element Configuration: Single
- Width: 1.2mm
- Forward Current: 200mA
- Diode Type: Schottky
- Peak Reverse Current: 5μA
- Subcategory: Rectifier Diodes
- Package / Case: 2-SMD, No Lead
- Terminal Position: END
- Speed: Small Signal =< 200mA (Io), Any Speed
- HTS Code: 8541.10.00.70
- Terminal Finish: Tin/Silver (Sn/Ag)
- Current - Reverse Leakage @ Vr: 5μA @ 40V
- Capacitance @ Vr, F: 880pF @ 0V 1MHz
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Max Operating Temperature: 125°C
- Max Reverse Voltage (DC): 50V
- Reverse Voltage: 50V
- Length: 2mm
- REACH SVHC: Unknown
- Peak Non-Repetitive Surge Current: 5A
- Diode Element Material: SILICON
- Height: 1.2mm
- Case Connection: ISOLATED
- Average Rectified Current: 200mA
- Max Reverse Leakage Current: 5μA
- JESD-609 Code: e2
- Capacitance: 8pF
- Reverse Recovery Time: 25 ns
- Terminal Form: WRAP AROUND
- Contact Plating: Silver, Tin
- Forward Voltage: 900mV
- Operating Temperature - Junction: 125°C Max
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
- Base Part Number: BAS386
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