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- Manufacturer No：VS-85HF60
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：VS-85HF60
- SKU：13129245
- Description：DIODE GEN PURP 600V 85A DO203AB
User Guide
User Guide
VS-85HF60 Details
DIODE GEN PURP 600V 85A DO203AB
VS-85HF60 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Bulk
- Number of Phases: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Min Operating Temperature: -65°C
- Published: 2008
- Element Configuration: Single
- Max Reverse Voltage (DC): 600V
- Reverse Voltage: 600V
- Forward Voltage: 1.2V
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Case Connection: CATHODE
- Peak Reverse Current: 9mA
- Reverse Recovery Time: 500 ns
- Package / Case: DO-203AB, DO-5, Stud
- Max Operating Temperature: 180°C
- Forward Current: 85A
- Max Surge Current: 1.8kA
- Natural Thermal Resistance: 0.25 °C/W
- Height: 17.35mm
- Max Forward Surge Current (Ifsm): 1.369kA
- RoHS Status: ROHS3 Compliant
- Number of Pins: 2
- Number of Elements: 1
- Number of Terminations: 1
- Radiation Hardening: No
- Application: GENERAL PURPOSE
- Factory Lead Time: 13 Weeks
- Diode Element Material: SILICON
- Diode Type: Standard
- Max Repetitive Reverse Voltage (Vrrm): 600V
- Terminal Finish: Tin (Sn) - with Nickel (Ni) barrier
- HTS Code: 8541.10.00.80
- Terminal Position: UPPER
- Mounting Type: Chassis, Stud Mount
- Terminal Form: SOLDER LUG
- Mount: Chassis, Stud
- JESD-30 Code: O-MUPM-D1
- Average Rectified Current: 85A
- Length: 36.5mm
- Peak Non-Repetitive Surge Current: 1.8kA
- Operating Temperature - Junction: -65°C~180°C
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
- Current - Reverse Leakage @ Vr: 9mA @ 600V
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