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- Manufacturer No：SI4953ADY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4953ADY-T1-E3
- SKU：13133849
- Description：MOSFET 2P-CH 30V 3.7A 8-SOIC
User Guide
User Guide
SI4953ADY-T1-E3 Details
MOSFET 2P-CH 30V 3.7A 8-SOIC
SI4953ADY-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Pbfree Code: yes
- JESD-609 Code: e3
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Published: 2011
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Power Dissipation: 2W
- Drain to Source Breakdown Voltage: 30V
- Width: 4mm
- Packaging: Cut Tape (CT)
- Rise Time: 10ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Height: 1.55mm
- Turn On Delay Time: 7 ns
- Series: TrenchFET?
- Max Power Dissipation: 1.1W
- Current: 37A
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
- Continuous Drain Current (ID): -4.9A
- Base Part Number: SI4953
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Terminations: 8
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Length: 5mm
- Gate to Source Voltage (Vgs): 20V
- Voltage: 30V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Fall Time (Typ): 20 ns
- Turn-Off Delay Time: 40 ns
- FET Feature: Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C: 3.7A
- FET Type: 2 P-Channel (Dual)
- Threshold Voltage: -1V
- Resistance: 53mOhm
- Nominal Vgs: -1 V
- Rds On (Max) @ Id, Vgs: 53m Ω @ 4.9A, 10V
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