BYG10M-E3/TR
Vishay Semiconductor Diodes Division
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Number of Terminations
2Number of Pins
2Pin Count
2Mounting Type
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Phases
1ECCN Code
EAR99Pbfree Code
yesRadiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeContact Plating
TinMin Operating Temperature
-55°CApplication
GENERAL PURPOSETerminal Position
DUALFactory Lead Time
10 WeeksPeak Reflow Temperature (Cel)
260Time@Peak Reflow Temperature-Max (s)
30Max Operating Temperature
150°CMax Junction Temperature (Tj)
150°CREACH SVHC
UnknownPublished
2005Diode Element Material
SILICONElement Configuration
SingleOperating Temperature - Junction
-55°C~150°CHeight
2.29mmCurrent
15AWidth
2.79mmAverage Rectified Current
1.5AForward Current
1.5APeak Reverse Current
1μAVoltage
1kVMax Reverse Voltage (DC)
1kVMax Repetitive Reverse Voltage (Vrrm)
1kVReverse Voltage
1kVMax Surge Current
30APeak Non-Repetitive Surge Current
30AMax Forward Surge Current (Ifsm)
30ALength
4.5mmHTS Code
8541.10.00.80Package / Case
DO-214AC, SMAVoltage - DC Reverse (Vr) (Max)
1000VTerminal Form
C BENDSubcategory
Rectifier DiodesSpeed
Standard Recovery >500ns, > 200mA (Io)Mount
Surface Mount, Through HoleAdditional Feature
FREE WHEELING DIODEForward Voltage
1.15VReverse Recovery Time
4 μsRecovery Time
4 μsDiode Type
AvalancheCurrent - Reverse Leakage @ Vr
1μA @ 1000VVoltage - Forward (Vf) (Max) @ If
1.15V @ 1.5ABase Part Number
BYG10M