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- Manufacturer No：1N4150TR
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：1N4150TR
- SKU：13208916
- Description：Diodes - General Purpose, Power, Switching Vr/50V Io/150mA T/R
User Guide
User Guide
1N4150TR Details
Diodes - General Purpose, Power, Switching Vr/50V Io/150mA T/R
1N4150TR Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mount: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Published: 2013
- Max Repetitive Reverse Voltage (Vrrm): 50V
- Terminal Form: WIRE
- Power Dissipation: 500mW
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Forward Voltage: 1V
- Case Connection: ISOLATED
- Peak Non-Repetitive Surge Current: 4A
- Max Forward Surge Current (Ifsm): 4A
- Average Rectified Current: 300mA
- Subcategory: Rectifier Diodes
- Peak Reverse Current: 100nA
- Output Current-Max: 0.15A
- Reverse Recovery Time: 4 ns
- Terminal Finish: Tin/Silver (Sn/Ag)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Base Part Number: 1N4150
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mounting Type: Through Hole
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Lead Free: Lead Free
- Max Reverse Voltage (DC): 50V
- Min Operating Temperature: -65°C
- Max Operating Temperature: 175°C
- REACH SVHC: Unknown
- Diode Element Material: SILICON
- Diode Type: Standard
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current Rating: 200mA
- Max Surge Current: 4A
- Forward Current: 150mA
- JESD-609 Code: e2
- Max Reverse Leakage Current: 100nA
- Package / Case: DO-204AH, DO-35, Axial
- HTS Code: 8541.10.00.70
- Recovery Time: 4 ns
- Operating Temperature - Junction: 175°C Max
- Current - Average Rectified (Io): 300mA DC
- Capacitance @ Vr, F: 2.5pF @ 0V 1MHz
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