BYG21M-E3/TR
Vishay Semiconductor Diodes Division
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Number of Terminations
2Number of Pins
2Pin Count
2Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Phases
1ECCN Code
EAR99Pbfree Code
yesRadiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeMin Operating Temperature
-55°CTerminal Position
DUALPublished
2016Factory Lead Time
10 WeeksPeak Reflow Temperature (Cel)
260Terminal Finish
Matte Tin (Sn)Time@Peak Reflow Temperature-Max (s)
30Max Operating Temperature
150°CMax Junction Temperature (Tj)
150°CREACH SVHC
UnknownDiode Element Material
SILICONElement Configuration
SingleOperating Temperature - Junction
-55°C~150°CHeight
2.29mmWidth
2.79mmSpeed
Fast Recovery =< 500ns, > 200mA (Io)Current Rating
1.5AAverage Rectified Current
1.5AForward Current
1.5APeak Reverse Current
1μAVoltage
1kVMax Reverse Voltage (DC)
1kVMax Repetitive Reverse Voltage (Vrrm)
1kVReverse Voltage
1kVMax Surge Current
30APeak Non-Repetitive Surge Current
30AMax Forward Surge Current (Ifsm)
30ALength
4.5mmHTS Code
8541.10.00.80Package / Case
DO-214AC, SMAVoltage - DC Reverse (Vr) (Max)
1000VTerminal Form
C BENDSubcategory
Rectifier DiodesForward Voltage
1.6VAdditional Feature
FREE WHEELING DIODEReverse Recovery Time
120 nsRecovery Time
120 nsDiode Type
AvalancheApplication
FAST SOFT RECOVERYCurrent - Reverse Leakage @ Vr
1μA @ 1000VVoltage - Forward (Vf) (Max) @ If
1.6V @ 1.5ABase Part Number
BYG21M