SS1H10-E3/61T
Vishay Semiconductor Diodes Division
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Number of Terminations
2Number of Pins
2Pin Count
2Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1ECCN Code
EAR99Pbfree Code
yesRadiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeContact Plating
TinTerminal Position
DUALPeak Reflow Temperature (Cel)
260Voltage - Rated DC
100VMax Reverse Voltage (DC)
100VVoltage
100VMax Repetitive Reverse Voltage (Vrrm)
100VReverse Voltage
100VMin Operating Temperature
-65°CTime@Peak Reflow Temperature-Max (s)
40Max Operating Temperature
175°CMax Junction Temperature (Tj)
175°CPublished
2008Current Rating
1AOutput Current
1AAverage Rectified Current
1AForward Current
1ACurrent
1AREACH SVHC
UnknownFactory Lead Time
11 WeeksDiode Element Material
SILICONElement Configuration
SinglePolarity
StandardHeight
2.29mmWidth
2.79mmSpeed
Fast Recovery =< 500ns, > 200mA (Io)Max Reverse Leakage Current
1μAPeak Reverse Current
1μALength
4.5mmDiode Type
SchottkyHTS Code
8541.10.00.80Package / Case
DO-214AC, SMAPeak Non-Repetitive Surge Current
50AMax Surge Current
50AMax Forward Surge Current (Ifsm)
50ATerminal Form
C BENDSubcategory
Rectifier DiodesOperating Temperature - Junction
175°C MaxAdditional Feature
LOW POWER LOSSCurrent - Reverse Leakage @ Vr
1μA @ 100VForward Voltage
620mVVoltage - Forward (Vf) (Max) @ If
770mV @ 1ABase Part Number
SS1H10