V8P10-M3/86A
Vishay Semiconductor Diodes Division
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Phases
1ECCN Code
EAR99Pbfree Code
yesRadiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeTerminal Position
DUALNumber of Terminations
3Number of Pins
3Pin Count
3Factory Lead Time
10 WeeksMin Operating Temperature
-40°CMax Reverse Voltage (DC)
100VMax Repetitive Reverse Voltage (Vrrm)
100VTerminal Finish
Matte Tin (Sn)Max Operating Temperature
150°CMax Junction Temperature (Tj)
150°CPublished
2009REACH SVHC
UnknownDiode Element Material
SILICONHeight
1.2mmSpeed
Fast Recovery =< 500ns, > 200mA (Io)Terminal Form
FLATOutput Current-Max
8AAverage Rectified Current
8AForward Current
8ADiode Type
SchottkyHTS Code
8541.10.00.80Max Reverse Leakage Current
70μAOperating Temperature - Junction
-40°C~150°CPeak Non-Repetitive Surge Current
150AMax Surge Current
150AMax Forward Surge Current (Ifsm)
150ACase Connection
CATHODEPeak Reverse Current
7mAApplication
EFFICIENCYElement Configuration
Common AnodeMount
Surface Mount, Through HolePackage / Case
TO-277, 3-PowerDFNManufacturer Package Identifier
TO-277A (SMPC)Width
6.15mmSeries
eSMP?, TMBS?Length
4.35mmForward Voltage
680mVAdditional Feature
FREE WHEELING DIODE , LOW POWER LOSSCurrent - Reverse Leakage @ Vr
70μA @ 100VBase Part Number
V8P10Voltage - Forward (Vf) (Max) @ If
680mV @ 8A