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- Manufacturer No：MURS120HE3/52T
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：MURS120HE3/52T
- SKU：13223490
- Description：DIODE GEN PURP 200V 2A DO214AA
User Guide
User Guide
MURS120HE3/52T Details
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3/52T Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): 260
- Operating Temperature - Junction: -65°C~175°C
- Max Repetitive Reverse Voltage (Vrrm): 200V
- Terminal Finish: Matte Tin (Sn)
- Max Operating Temperature: 175°C
- Diode Element Material: SILICON
- Diode Type: Standard
- Average Rectified Current: 2A
- Part Status: Discontinued
- HTS Code: 8541.10.00.80
- Max Surge Current: 40A
- Terminal Form: C BEND
- Peak Reverse Current: 2μA
- Recovery Time: 35 ns
- Additional Feature: FREE WHEELING DIODE, HIGH RELIABILITY
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Base Part Number: MURS120
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Phases: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Min Operating Temperature: -65°C
- Max Reverse Voltage (DC): 200V
- Reverse Voltage: 200V
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2008
- Element Configuration: Single
- Output Current-Max: 2A
- Forward Current: 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Package / Case: DO-214AA, SMB
- Peak Non-Repetitive Surge Current: 40A
- Subcategory: Rectifier Diodes
- Reverse Recovery Time: 35 ns
- Application: EFFICIENCY
- Current - Reverse Leakage @ Vr: 2μA @ 200V
- Forward Voltage: 875mV
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