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- Manufacturer No：SI7888DP
- Manufacturer：VISHAY SILICONIX
- Category：
- Datasheet：SI7888DP
- SKU：13249635
- Description：
User Guide
User Guide
SI7888DP Details
SI7888DP Specification Parameters
- Number of Elements: 1
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Terminal Position: DUAL
- JESD-609 Code: e0
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 30V
- Transistor Application: SWITCHING
- Pulsed Drain Current-Max (IDM): 50A
- Configuration: SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type: N-CHANNEL
- Drain Current-Max (Abs) (ID): 9.4A
- Avalanche Energy Rating (Eas): 20 mJ
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pin Count: 8
- Qualification Status: Not Qualified
- Number of Terminals: 5
- Reach Compliance Code: compliant
- Terminal Finish: TIN LEAD
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max: 0.012Ohm
- JESD-30 Code: R-XDSO-C5
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