BYG23T-M3/TR
Vishay Semiconductor Diodes Division
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Number of Terminations
2Number of Pins
2Pin Count
2Mounting Type
Surface MountMount
Surface MountNumber of Elements
1ECCN Code
EAR99Radiation Hardening
NoJESD-609 Code
e3Contact Plating
TinMin Operating Temperature
-55°CTerminal Position
DUALFactory Lead Time
10 WeeksPeak Reflow Temperature (Cel)
260Zener Voltage
200VTime@Peak Reflow Temperature-Max (s)
30Max Operating Temperature
150°CPublished
2006Output Current-Max
1AAverage Rectified Current
1AForward Current
1AREACH SVHC
UnknownDiode Element Material
SILICONElement Configuration
SingleOperating Temperature - Junction
-55°C~150°CHeight
2.29mmWidth
2.79mmSpeed
Fast Recovery =< 500ns, > 200mA (Io)Terminal Form
FLATLength
4.5mmHTS Code
8541.10.00.80Peak Reverse Current
5μAPackage / Case
DO-214AC, SMAForward Voltage
1.9VMax Power Dissipation
800mWMax Surge Current
18APeak Non-Repetitive Surge Current
18AMax Forward Surge Current (Ifsm)
18APackaging
Digi-Reel?Reverse Recovery Time
75 nsRecovery Time
75 nsDiode Type
AvalancheMax Reverse Voltage (DC)
1.3kVMax Repetitive Reverse Voltage (Vrrm)
1.3kVReverse Voltage
1.3kVCurrent - Average Rectified (Io)
1A DCCapacitance @ Vr, F
9pF @ 4V 1MHzVoltage - DC Reverse (Vr) (Max)
1300VCurrent - Reverse Leakage @ Vr
5μA @ 1300VVoltage - Forward (Vf) (Max) @ If
1.9V @ 1ABase Part Number
BYG23T