VS-8EWS08STRPBF
Vishay Semiconductor Diodes Division
RoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Number of Terminations
2Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Phases
1ECCN Code
EAR99Pbfree Code
yesRadiation Hardening
NoJESD-609 Code
e3Min Operating Temperature
-55°CPart Status
ObsoleteNumber of Pins
3Terminal Form
GULL WINGPeak Reflow Temperature (Cel)
260Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrierTime@Peak Reflow Temperature-Max (s)
10Published
2011Max Operating Temperature
150°CDiode Element Material
SILICONDiode Type
StandardOperating Temperature - Junction
-55°C~150°CTerminal Position
SINGLEHeight
2.39mmOutput Current-Max
8AAverage Rectified Current
8AForward Current
8AHTS Code
8541.10.00.80Max Repetitive Reverse Voltage (Vrrm)
800VMax Reverse Voltage (DC)
800VReverse Voltage
800VSubcategory
Rectifier DiodesSpeed
Standard Recovery >500ns, > 200mA (Io)Forward Voltage
1.1VJESD-30 Code
R-PSSO-G2Peak Reverse Current
50μALength
6.73mmPackage / Case
TO-252-3, DPak (2 Leads + Tab), SC-63Case Connection
CATHODEMax Surge Current
200APeak Non-Repetitive Surge Current
200AMax Forward Surge Current (Ifsm)
200AElement Configuration
Common AnodeWidth
6.22mmJEDEC-95 Code
TO-252AAApplication
HIGH VOLTAGEVoltage - Forward (Vf) (Max) @ If
1.1V @ 8ACurrent - Reverse Leakage @ Vr
50μA @ 800V