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- Manufacturer No：1N4448TAP
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：1N4448TAP
- SKU：13309557
- Description：Diodes - General Purpose, Power, Switching Vr/75V Io/150mA
User Guide
User Guide
1N4448TAP Details
Diodes - General Purpose, Power, Switching Vr/75V Io/150mA
1N4448TAP Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mount: Through Hole
- ECCN Code: EAR99
- Published: 2013
- Max Repetitive Reverse Voltage (Vrrm): 100V
- Terminal Form: WIRE
- Max Operating Temperature: 175°C
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Max Reverse Voltage (DC): 75V
- Peak Non-Repetitive Surge Current: 2A
- Max Forward Surge Current (Ifsm): 2A
- Length: 3.9mm
- Average Rectified Current: 150mA
- Peak Reverse Current: 5μA
- Subcategory: Rectifier Diodes
- Width: 1.7mm
- Output Current-Max: 0.3A
- Reverse Recovery Time: 8 ns
- HTS Code: 8541.10.00.70
- Operating Temperature - Junction: 175°C Max
- Capacitance @ Vr, F: 4pF @ 0V 1MHz
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Peak Reflow Temperature (Cel): 260
- Min Operating Temperature: -65°C
- Time@Peak Reflow Temperature-Max (s): 30
- Max Power Dissipation: 500mW
- Diode Element Material: SILICON
- Diode Type: Standard
- Packaging: Tape & Box (TB)
- Max Surge Current: 2A
- Forward Voltage: 1V
- Case Connection: ISOLATED
- Forward Current: 300mA
- JESD-609 Code: e2
- Height: 1.7mm
- Package / Case: DO-204AH, DO-35, Axial
- Speed: Small Signal =< 200mA (Io), Any Speed
- Recovery Time: 8 ns
- Terminal Finish: Tin/Silver (Sn/Ag)
- Max Reverse Leakage Current: 25nA
- Current - Reverse Leakage @ Vr: 5μA @ 75V
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