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- Manufacturer No：SI7844DP-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI7844DP-T1-E3
- SKU：13339389
- Description：MOSFET 2N-CH 30V 6.4A PPAK SO-8
User Guide
User Guide
SI7844DP-T1-E3 Details
MOSFET 2N-CH 30V 6.4A PPAK SO-8
SI7844DP-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Pbfree Code: yes
- JESD-609 Code: e3
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Number of Terminations: 6
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Max Operating Temperature: 150°C
- Published: 2009
- Continuous Drain Current (ID): 10A
- Drain to Source Breakdown Voltage: 30V
- Packaging: Cut Tape (CT)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Fall Time (Typ): 10 ns
- Threshold Voltage: 2.4V
- Max Power Dissipation: 1.4W
- Height: 1.07mm
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Resistance: 22mOhm
- Current - Continuous Drain (Id) @ 25°C: 6.4A
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250μA
- JESD-30 Code: R-XDSO-C6
- Base Part Number: SI7844
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Part Status: Obsolete
- Pin Count: 8
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Dual
- Width: 5mm
- Gate to Source Voltage (Vgs): 20V
- Dual Supply Voltage: 30V
- Transistor Application: SWITCHING
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Rise Time: 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Power Dissipation: 1.4W
- Turn On Delay Time: 8 ns
- Series: TrenchFET?
- Turn-Off Delay Time: 21 ns
- Drain Current-Max (Abs) (ID): 6.4A
- Length: 5.99mm
- Nominal Vgs: 2.4 V
- Package / Case: PowerPAK? SO-8 Dual
- Rds On (Max) @ Id, Vgs: 22m Ω @ 10A, 10V
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