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- Manufacturer No：JANTX2N6851
- Manufacturer：VISHAY SILICONIX
- Category：
- Datasheet：JANTX2N6851
- SKU：13486871
- Description：
User Guide
User Guide
JANTX2N6851 Details
JANTX2N6851 Specification Parameters
- Surface Mount: NO
- ECCN Code: EAR99
- Qualification Status: Not Qualified
- Terminal Form: WIRE
- Terminal Position: BOTTOM
- Drain Current-Max (Abs) (ID): 4A
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Polarity/Channel Type: P-CHANNEL
- JESD-30 Code: O-MBCY-W3
- Additional Feature: RADIATION HARDENED
- Number of Elements: 1
- Number of Terminals: 3
- DS Breakdown Voltage-Min: 200V
- Transistor Element Material: SILICON
- Pulsed Drain Current-Max (IDM): 20A
- Transistor Application: SWITCHING
- Configuration: SINGLE WITH BUILT-IN DIODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max: 0.8Ohm
- Avalanche Energy Rating (Eas): 500 mJ
- JEDEC-95 Code: TO-205AF
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