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- Manufacturer No：IXFN170N10
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFN170N10
- SKU：13522602
- Description：MOSFET N-CH 100V 170A SOT-227B
User Guide
User Guide
IXFN170N10 Details
MOSFET N-CH 100V 170A SOT-227B
IXFN170N10 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 4
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- REACH SVHC: No SVHC
- Dual Supply Voltage: 100V
- Mount: Chassis Mount
- Transistor Element Material: SILICON
- Resistance: 10mOhm
- Published: 2000
- Power Dissipation: 600W
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Terminal Position: UPPER
- Rise Time: 90 ns
- Nominal Vgs: 4 V
- Continuous Drain Current (ID): 170A
- Fall Time (Typ): 79 ns
- Pulsed Drain Current-Max (IDM): 680A
- Current - Continuous Drain (Id) @ 25°C: 170A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 515nC @ 10V
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pin Count: 4
- Packaging: Tube
- Qualification Status: Not Qualified
- Drain to Source Breakdown Voltage: 100V
- Mounting Type: Chassis Mount
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Case Connection: ISOLATED
- FET Type: N-Channel
- Threshold Voltage: 4V
- Terminal Form: UNSPECIFIED
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Terminal Finish: Nickel (Ni)
- Package / Case: SOT-227-4, miniBLOC
- Series: HiPerFET?
- JESD-30 Code: R-PUFM-X4
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Power Dissipation-Max: 600W Tc
- Turn-Off Delay Time: 158 ns
- Rds On (Max) @ Id, Vgs: 10m Ω @ 500mA, 10V
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