BAS70-06-V-GS18
Vishay Semiconductor Diodes Division
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Number of Elements
2Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)ECCN Code
EAR99Pbfree Code
yesRadiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeTerminal Position
DUALMax Operating Temperature
125°CNumber of Terminations
3Number of Pins
3Pin Count
3Terminal Form
GULL WINGPeak Reflow Temperature (Cel)
260Min Operating Temperature
-65°CTime@Peak Reflow Temperature-Max (s)
10Terminal Finish
Matte Tin (Sn)Factory Lead Time
13 WeeksDiode Element Material
SILICONPower Dissipation
200mWForward Current
200mAAverage Rectified Current
200mADiode Type
SchottkyPackage / Case
TO-236-3, SC-59, SOT-23-3Peak Non-Repetitive Surge Current
600mAMax Surge Current
600mASubcategory
Rectifier DiodesMax Reverse Leakage Current
100nAPeak Reverse Current
100nAMax Repetitive Reverse Voltage (Vrrm)
70VMax Reverse Voltage (DC)
70VOutput Current-Max
0.2AElement Configuration
Common AnodeSpeed
Small Signal =< 200mA (Io), Any SpeedReverse Recovery Time
5 nsRecovery Time
5 nsHTS Code
8541.10.00.70Diode Configuration
1 Pair Common AnodeOperating Temperature - Junction
125°C MaxCurrent - Average Rectified (Io)
200mA DCCurrent - Reverse Leakage @ Vr
100nA @ 50VForward Voltage
410mVVoltage - Forward (Vf) (Max) @ If
410mV @ 1mABase Part Number
BAS70-06