IRF510
Vishay Siliconix
Moisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1Radiation Hardening
NoRoHS Status
Non-RoHS CompliantMin Operating Temperature
-55°CPart Status
ObsoletePackaging
TubeNumber of Pins
3Published
2016Lead Free
Contains LeadVoltage - Rated DC
100VDrain to Source Voltage (Vdss)
100VDrain to Source Breakdown Voltage
100VMax Operating Temperature
175°CREACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleGate to Source Voltage (Vgs)
20VFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Operating Temperature
-55°C~175°C TJVgs (Max)
±20VPackage / Case
TO-220-3Width
4.7mmSupplier Device Package
TO-220ABInput Capacitance
180pFTurn-Off Delay Time
15 nsVgs(th) (Max) @ Id
4V @ 250μACurrent Rating
5.6AContinuous Drain Current (ID)
5.6ALength
10.41mmWeight
6.000006gNominal Vgs
4 VTurn On Delay Time
6.9 nsRise Time
16nsPower Dissipation
43WHeight
9.01mmDrain to Source Resistance
540mOhmFall Time (Typ)
9.4 nsPower Dissipation-Max
43W TcGate Charge (Qg) (Max) @ Vgs
8.3nC @ 10VCurrent - Continuous Drain (Id) @ 25°C
5.6A TcRds On Max
540 mΩInput Capacitance (Ciss) (Max) @ Vds
180pF @ 25VRds On (Max) @ Id, Vgs
540mOhm @ 3.4A, 10V