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- Manufacturer No：IRF510S
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF510S
- SKU：146287
- Description：MOSFET N-CH 100V 5.6A D2PAK
User Guide
User Guide
IRF510S Details
MOSFET N-CH 100V 5.6A D2PAK
IRF510S Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Voltage - Rated DC: 100V
- Drain to Source Breakdown Voltage: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time: 15 ns
- Length: 10.67mm
- Current Rating: 5.6A
- Supplier Device Package: D2PAK
- Turn On Delay Time: 6.9 ns
- Power Dissipation: 43W
- Fall Time (Typ): 9.4 ns
- Current - Continuous Drain (Id) @ 25°C: 5.6A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
- Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
- Mounting Type: Surface Mount
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 100V
- Max Operating Temperature: 175°C
- Element Configuration: Single
- FET Type: N-Channel
- Height: 4.83mm
- Vgs (Max): ±20V
- Input Capacitance: 180pF
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Width: 9.65mm
- Continuous Drain Current (ID): 5.6A
- Weight: 1.437803g
- Rise Time: 16ns
- Drain to Source Resistance: 540mOhm
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Rds On Max: 540 mΩ
- Power Dissipation-Max: 3.7W Ta 43W Tc
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