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- Manufacturer No：IRF520
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF520
- SKU：146379
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 9.2A Tc 9.2A 60W 20ns
User Guide
User Guide
IRF520 Details
Tube Through Hole N-Channel Single Mosfet Transistor 9.2A Tc 9.2A 60W 20ns
IRF520 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Voltage - Rated DC: 100V
- Drain to Source Breakdown Voltage: 100V
- Max Operating Temperature: 175°C
- Element Configuration: Single
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Power Dissipation: 60W
- Length: 10.41mm
- Rise Time: 30ns
- Turn-Off Delay Time: 19 ns
- Turn On Delay Time: 8.8 ns
- Current Rating: 9.2A
- Height: 9.01mm
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 9.2A Tc
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 100V
- Published: 2011
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Fall Time (Typ): 20 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Input Capacitance: 360pF
- Drain to Source Resistance: 270mOhm
- Weight: 6.000006g
- Continuous Drain Current (ID): 9.2A
- Power Dissipation-Max: 60W Tc
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Rds On Max: 270 mΩ
- Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
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